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[Tu-P-89LN] Oxygen-vacancy origin of spin centers with surface-robust charge stability in 4H-SiC

*Yu Chen^1,2, Qi Zhang^1,3,4, Mingzhe Liu¹, Junda Wu^1,3, Jinpeng Liu^1,3, Xin Zhao¹, Jingyang Zhou¹, Pei Yu¹, Shaochun Lin¹, Yuanhong Teng¹, Wancheng Yu⁵, Ya Wang^1,2,6, Chang-Kui Duan^1,2,6, Fazhan Shi^1,2,3,6 (1. Lab. of Spin Magnetic Resonance, School of Physical Sci., and Anhui Province Key Lab. of Scientific Instrument Development and Application, Univ. of Sci. and Tech. of China, Hefei 230026 (China), 2. Hefei National Lab., Univ. of Sci. and Tech. of China, Hefei 230088 (China), 3. School of Biomedical Eng. and Suzhou Inst. for Advanced Res., Univ. of Sci. and Tech. of China, Suzhou 215123 (China), 4. Inst. of Quantum Sensing, Zhejiang Key Lab. of R&D and Application of Cutting-edge Scientific Instruments, State Key Lab. of Ocean Sensing, School of Physics, Zhejiang Univ., Hangzhou 310027 (China), 5. State Key Lab. of Crystal Materials, Inst. of Novel Semiconductors, Shandong Univ., Jinan 250100 (China), 6. Hefei National Res. Center for Physical Sci. at the Microscale, Univ. of Sci. and Tech. of China, Hefei 230026 (China))