Presentation Information
[Tu-P-93LN]Cathodoluminescence mapping of band bending effects from different 4H-SiC Schottky diodes for defect spin control
*Aurora Teien1, Maria Martins2, Andreas Gottscholl3, Axel Erlebach2, Erlend Lemva Ousdal1, Augustinas Galeckas1, Ulrike Grossner2, Corey Cochrane3, Hannes Kraus3, Lasse Vines1, Marianne Etzelmüller Bathen1 (1. University of Oslo (Norway), 2. ETH Zürich (Switzerland), 3. NASA Jet Propulsion Laboratory, California Institute of Technology (USA))