Session Details
[Mo-P]Quantum Applications and Sensors
Mon. Sep 28, 2026 1:00 PM - 3:00 PM JST
Mon. Sep 28, 2026 4:00 AM - 6:00 AM UTC
Mon. Sep 28, 2026 4:00 AM - 6:00 AM UTC
Poster-A(1st Floor)
[Mo-P-28]PL6 centers in 4H-SiC for spin-based quantum technologies
*Raphael Wörnle1,2,3, Jonathan Körber1,2, Timo Steidl1,2, Georgy Astakhov4, Durga Dasari1,2, Vadim Vorobyov1,2, Florian Kaiser5,6, Jörg Wrachtrup1,2,3 (1. 3rd Institute of Physics, University of Stuttgart (Germany), 2. Center for Integrated Quantum Science and Technology (Germany), 3. Max Planck Institute for Solid State Research (Germany), 4. Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (Germany), 5. Materials Research and Technology (MRT) Department, Luxembourg Institute of Science and Technology (LIST) (Luxembourg), 6. Department of Physics and Materials Science, University of Luxembourg (Luxembourg))
Withdrawn
[Mo-P-30]Toward Scalable Telecom-Band Quantum Emitters: Integration of Chlorine-Defect Centers in 4H-SiC Nanostructures
*Ashin Varghese Mathews1,2, Andrei N. Anisimov1, Kalliopi Mavridou1, Ulrich Kentsch1, Manfred Helm1,2, Georgy V. Astakhov1 (1. Helmholtz-Zentrum Dresden-Rossendorf (Germany), 2. Technische Universität Dresden (Germany))
[Mo-P-31]Theory of Strained Quantum Emitters
*Vytautas Žalandauskas1, Rokas Silkinis2, Lukas Razinkovas2, Ali Tayefeh Younesi3, Minh Tuan Luu3, Ronald Ulbricht3, Ulrike Grossner4, Lasse Vines1, Marianne Etzelmüller Bathen1,4 (1. University of Oslo (Norway), 2. Center for Physical Sciences and Technology (FTMC) (Lithuania), 3. Max-Planck Institut für Polymerforschung (Germany), 4. ETH Zürich (Switzerland))
[Mo-P-32]High-Fidelity Nuclear Spin Quantum Control in Silicon Carbide Color Centers
*Irene Carrión López1, Pierre Kuna1, Erik Hesselmeier-Hüttman1, Jawad Ul-Hassan2, Vadim Vorobyov1, Jörg Wrachtrup1,3 (1. 3rd Inst. of Physics, Univ. of Stuttgart (Germany), 2. Dpt. of Physics, Chemistry and Biology, Univ. of Linköping (Sweden), 3. Max Planck Inst. for solid state physics (Germany))
[Mo-P-33]Finite-Time Photoluminescence Readout for Spin-3/2 Ground States in 4H-SiC Silicon Vacancies
*Jun-Jae Choi1, Seung-Jae Hwang1, Seoyoung Paik1, Sang-Yun Lee1 (1. Gwangju Inst. of Sci. and Tech. (Korea))
[Mo-P-34]Structural Relaxation and Aggregation of Vacancy Defects in Monolayer Silicon Carbide
*Peter Udvarhelyi1 (1. National Inst. for Materials Sci. (Japan))
[Mo-P-35]Photoluminescence study of Vanadium in 4H- and 6H- Silicon Carbide
Ibrahim Boulares1, Jeremy L Smith1, *Brenda VanMil1 (1. DEVCOM Army Research Lab. (USA))