[FMCp2] Materials and Measurements

[5] Influence of Inlet Opening Size on Precursor and Thermal Uniformity in 8-inch GaN MOCVD Reactors

*Chehung Wei¹, Long-Sheng Li¹ (1. Tatung University (Taiwan))

Keywords:

MOCVD reactor design,inlet opening size,precursor uniformity,thermal uniformity,GaN deposition