Presentation Information

[9]Transparent Hydrogen-Doped In2O3 Channels Prepared by RF Sputtering for High-Performance Light-Emitting Transistors

*Ye-Jin Shim1, Jong-Hyun Jang1, Doha Lim1, Sihun Park1, Min-Seo Kim1, Yu Jung Park2, Jung Hwa Seo2, Han-Ki Kim1 (1. Sungkyunkwan University (Korea), 2. University of Seoul (Korea))

Keywords:

Hydrogen-doped In2O3 (In2O3:H),Oxide semiconductors,RF sputtering,Light-Emitting Transistors (LETs)


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