Presentation Information
[2]Characterization of BAlGaN Diodes for High-Temperature Tolerant Neutron Detectors
*Ryusuke Suzuki1, Hinata Nakanishi1, Ryohei Kudo1, Toru Oikawa1, Yoku Inoue1, Toru Aoki1, Takayuki Nakano1 (1. Shizuoka University (Japan))
Keywords:
BAlGaN,neutron detector,semiconductor neutron detector,GaN,MOVPE
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