Presentation Information

[2]Characterization of BAlGaN Diodes for High-Temperature Tolerant Neutron Detectors

*Ryusuke Suzuki1, Hinata Nakanishi1, Ryohei Kudo1, Toru Oikawa1, Yoku Inoue1, Toru Aoki1, Takayuki Nakano1 (1. Shizuoka University (Japan))

Keywords:

BAlGaN,neutron detector,semiconductor neutron detector,GaN,MOVPE


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