Presentation Information

[3(Invited)]Ultra High Resolution Micro LED Displays with High Efficiency Enabled by 200 and 300 mm GaN-on-Si LED Epiwafers(20min.)

*Atsushi Nishikawa1, Kenjiro Uesugi1, Alexander Loesing1, Burkhard Slischka1 (1. ALLOS Semiconductors GmbH (Germany))

Keywords:

micro LED,GaN-on-Si,curvature,200 mm and 300 mm epiwafer,strain-engineering


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