Presentation Information
[2]Proton-Induced Adaptive Trap Modulation in A/N Memory Devices for Low-Power Edge-AI Electronics under Radiation Environments
*Gang Guk Park1, Joon Hwang3, Kyeongsik KO1, Jisu Kim1, Hyuk Ju Ahn1, Young Woo Kim1, Sion Kim1, In Ho Kim1, Sung Yun Woo2, Jong-Ho Lee3, Sang Jik Kwon1, Eou-Sik Cho1, Min-Kyu Park1 (1. Gachon University (Korea), 2. Kyungpook National University (Korea), 3. Seoul National University (Korea))
Keywords:
A/N Memory Device,Proton Irradiation,Trap-State Modulation,Radiation-Tolerant Electronics,Edge AI
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