Presentation Information
[P2-2-02]High-Speed Short-Circuit Protection with Parasitic Inductance in 3.3 kV SiC-MOSFET Power Modules
*Yusuke Takada1, Takashi Hirao1, Hiroshi Suzuki1, Yusuke Kanno2, Yasuhiko Kouno2 (1. Research & Development Group, Hitachi, Ltd. (Japan), 2. Railway System Business Unit, Hitachi, Ltd. (Japan))
Keywords:
SiC-MOSFET,short-circuit,fast protection