[O12-3] Active Gate Drive Techniques for EMI Reduction in Power Converters | IPEC2026

Advanced Search

Session Details

Regular SessionSemiconductor Power Conversion : Latest solution for EMI and EMC

[O12-3]Active Gate Drive Techniques for EMI Reduction in Power Converters

Thu. Jun 4, 2026 8:30 AM - 9:50 AM JST
Thu. Jun 4, 2026 11:30 PM - 12:50 AM UTC

Room 101C(1F)

Chair:Shuting Li(Aalborg University), Sari Maekawa

8:30 AM - 8:50 AM JST(11:30 PM - 11:50 PM UTC)

[O12-3-01]Optimized SiC MOSFET Switching Control with Adaptive Dynamic Gate Resistance

*Pratik Limbu¹, Sui Ping Cheung¹, Tin Ho Li¹ (1. Hong Kong Applied Science and Technology Research Institute (ASTRI) (Hong Kong))

8:50 AM - 9:10 AM JST(11:50 PM - 12:10 AM UTC)

[O12-3-02]A Study on Efficiency Improvement of a Three-Phase Inverter by Partial Active Gate Control Considering Load Power Factor

*Daisuke Saito¹, Hidemine Obara¹, Katsuhiro Hata² (1. Yokohama National University (Japan), 2. Shibaura Institute of Technology (Japan))

9:10 AM - 9:30 AM JST(12:10 AM - 12:30 AM UTC)

[O12-3-03]EMI Suppression in Asymmetric H-Bridge SRM Drives Using Active Gate Drive

*Hajime Takayama¹, Kazuki Matsumoto¹, Shiu Mochiyama², Shuhei Fukunaga³, Michihiro Shintani¹, Takashi Hikihara² (1. Kyoto Institute of Technology (Japan), 2. Kyoto University (Japan), 3. The University of Osaka (Japan))

9:30 AM - 9:50 AM JST(12:30 AM - 12:50 AM UTC)

[O12-3-04]EMI Optimization of Capacitive Power Transfer as Scalable Low-Cost Multi-Load Supply for Isolating Gate Drivers

*Adrian Amler¹, Thomas Lehmeier¹, Madlen Hoffmann¹, Martin März^1,2 (1. Friedrich-Alexander-Universität Erlangen-Nürnberg (Germany), 2. Fraunhofer Institute for Integrated Systems and Device Technology IISB (Germany))

Back to Category List