Session Details
[O3-5]Application Circuits of New Generation Power Devices
Mon. Jun 1, 2026 4:30 PM - 6:10 PM JST
Mon. Jun 1, 2026 7:30 AM - 9:10 AM UTC
Mon. Jun 1, 2026 7:30 AM - 9:10 AM UTC
Room 103(1F)
Chair:Wai Keung Mo(The university of southern denmark), Ryohei Okada(Takusyoku Univeristy)
[O3-5-01]5 kW 2.79 MHz four-cells series connected Class-E push-pull using GaN HEMT and scaling power to 60 kW for Float Zone Silicon Production
*Faheem Ahmad1, Hassan Mujtaba1, Stefan Liccardi1, Jannick Kjaer Jorgensen1, Benoit Biddogia2, Stig Munk-Nielsen1 (1. Aalborg University (Denmark), 2. Topsil Globalwafers A/S (Denmark))
[O3-5-02]Voltage Balancing of Dual-Output IPOS LLC Resonant Converter Using an Integrated Transformer
Seunghoon Lee1, *Youngwoo Jo2, Jaeseong Lim2, Honnyong Cha2 (1. Hyosung Corporation (Korea), 2. Kyungpook National University (Korea))
[O3-5-03]Analysis and Design of an Integrated-Transformer TriMagiC ConverterTM for 48 V-to-1 V PoL Applications
*Ryota Nozaki1, Itsuki Masuda1, Sihoon Choi2, Yu Yonezawa2, Jun Imaoka2, Masayoshi Yamamoto2, Mitsunao Fujimoto3, Katsuya Kameda3 (1. Department of Electrical Engineering, Nagoya University (Japan), 2. Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University (Japan), 3. Research and Development dept, Diamet Corporation (Japan))
[O3-5-04]Estimation of Switching Losses at Zero-Voltage Switching Considering the AC Winding Resistance of an Extremely Highly Efficient 850-V 100-kW 16-kHz Dual-Active-Bridge Converter
*Ryo Haneda1, Masahiro Isoda1, Hirofumi Akagi2, Takahiro Nozaki1 (1. Keio University (Japan), 2. Institute of Science Tokyo (Japan))
[O3-5-05]An Active Technique for Turn-On Current Overshoot Suppression in GaN HEMT Half-Bridges
Manish Mandal1, Harish S1, *Kaushik Basu1 (1. Indian Institute of Science Bengaluru (India))
