Poster Session 1

4:00 PM - 5:30 PM JST(7:00 AM - 8:30 AM UTC)

[04P-32] High Aspect Ratio Etching of SiO₂ at Low-Temperature using Low-Global Warming C₃H₂F₆

*Eunsu Lee¹, Yeonock Han², Daeun Hong³, Minsung Jeon¹, Heeyeop Chae^3,1 (1. Department of Semiconductor Convergence Engineering, Sungkyunkwan University (SKKU) (Korea), 2. Department of Semiconductor and Display Engineering, Sungkyunkwan University (SKKU) (Korea), 3. School of Chemical Engineering, Sungkyunkwan University (SKKU) (Korea))