Presentation Information
[05pB11O]Characterizations of Additional Post Deposition Annealing (PDA) on TiN/Al-Doped HfO2/Si (MIS) Structures
Pi-Chun Juan1, *Cheng-Wei Lin1, De-Hao Li1, Yen-Ho Chu2, Liang-Pin Chou2, Chung-Lin Huang 2 (1. Department of Materials Engineering and Center for Plasma and Thin Film Technologies, Ming Chi University of Technology (Taiwan), 2. Nanya Technology Corporation (NTC) (Taiwan))