Presentation Information
[05P-50]Growth of GaN on Graphene/SiO2/Si (100) by Radical Enhanced Metal Organic Chemical Vapor Deposition.
*Swathy Jayaprasad1, Arun Kumar Dhasiyan2, Naohiro Shimizu2, Osamu Oda2, Hiromasa Tanaka2, Masaru Hori2 (1. Department of Electronic Engineering, Graduate School Student, Nagoya University (Japan), 2. Center for low temperature plasma science, Nagoya University (Japan))