Poster Session 2

4:00 PM - 5:30 PM JST(7:00 AM - 8:30 AM UTC)

[05P-64] An Investigation of HfxAl_1-xO-Based Gate Dielectric Used in Metal-oxide-semiconductor High Electron Mobility Transistor

*Shi-Cheng Huang¹, Liang-Jun Wang², Chun-Yu Lin¹, Zi-Hao Wang¹, Shyh-Jer Huang^3,4, Rong-Ming Ko¹, Yan-Kuin Su^1,2,3 (1. Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng Kung University (Taiwan), 2. Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University (Taiwan), 3. Department of Electrical Engineering and Green Energy Technology Research Center, Kun Shan University (Taiwan), 4. Department of Electro-Optical Engineering, National Formosa University (Taiwan))