Presentation Information
[05P-64]An Investigation of HfxAl1-xO-Based Gate Dielectric Used in Metal-oxide-semiconductor High Electron Mobility Transistor
*Shi-Cheng Huang1, Liang-Jun Wang2, Chun-Yu Lin1, Zi-Hao Wang1, Shyh-Jer Huang3,4, Rong-Ming Ko1, Yan-Kuin Su1,2,3 (1. Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng Kung University (Taiwan), 2. Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University (Taiwan), 3. Department of Electrical Engineering and Green Energy Technology Research Center, Kun Shan University (Taiwan), 4. Department of Electro-Optical Engineering, National Formosa University (Taiwan))