Presentation Information
[05P-65]Application of ALD-Derived Al2O3/HfxAl1-xO Bilayer as Gate Dielectric in AlGaN/GaN High Electron Mobility Transistor
*Chun Yu Lin1, Wei-Xuan Hou2, Shi-Cheng Huang1, Zi-Hao Wang1, Shyh-Jer Huang3,4, Rong-Ming Ko1, Yan-Kuin Su1,2,3 (1. Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng Kung University (Taiwan), 2. Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University (Taiwan), 3. Department of Electrical Engineering and Green Energy Technology Research Center, Kun Shan University (Taiwan), 4. Department of Electro-Optical Engineering, National Formosa University (Taiwan))