Poster Session 2

4:00 PM - 5:30 PM JST(7:00 AM - 8:30 AM UTC)

[05P-65] Application of ALD-Derived Al₂O₃/HfxAl_1-xO Bilayer as Gate Dielectric in AlGaN/GaN High Electron Mobility Transistor

*Chun Yu Lin¹, Wei-Xuan Hou², Shi-Cheng Huang¹, Zi-Hao Wang¹, Shyh-Jer Huang^3,4, Rong-Ming Ko¹, Yan-Kuin Su^1,2,3 (1. Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng Kung University (Taiwan), 2. Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University (Taiwan), 3. Department of Electrical Engineering and Green Energy Technology Research Center, Kun Shan University (Taiwan), 4. Department of Electro-Optical Engineering, National Formosa University (Taiwan))