Poster Session 2

4:00 PM - 5:30 PM JST(7:00 AM - 8:30 AM UTC)

[05P-68] N-polar Al_0.2Ga_0.8N-Channel HFETs Fabricated on Single-Crystal AlN Substrate

*Hitoshi Susuki¹, Yoshinobu Kometani¹, Takashi Egawa¹, Makoto Miyoshi¹ (1. Nagoya Institute of Technology (Japan))