ISPlasma2025/IC-PLANTS2025
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4:00 PM - 5:30 PM JST
(7:00 AM - 8:30 AM UTC)
[05P-68]
N-polar Al
0.2
Ga
0.8
N-Channel HFETs Fabricated on Single-Crystal AlN Substrate
*Hitoshi Susuki
1
, Yoshinobu Kometani
1
, Takashi Egawa
1
, Makoto Miyoshi
1
(1. Nagoya Institute of Technology (Japan))
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