Presentation Information

[05P-67]Ab Initio Study on the Effects of N Atoms on Band Alignments at 4H-SiC/SiO2 Interface

*Naoto Ise1, Toru Akiyama1, Tetsuo Hatakeyama2, Kenji Shiraishi3, Takashi Nakayama4 (1. Mie-University (Japan), 2. Toyama Prefectural-University (Japan), 3. Nagoya-University (Japan), 4. Chiba-University (Japan))