Poster Session 2

4:00 PM - 5:30 PM JST(7:00 AM - 8:30 AM UTC)

[05P-60] Reduction of Positive Fixed Charges At Al₂O₃/P-GaN Interface by Pre-Annnealing Using AlON Cap Layer

*Masanobu Takahashi¹, Yining Jiao¹, Masamichi Akazawa¹ (1. Hokkaido University (Japan))