Presentation Information
[04P-31]Control of plasma etching rate of thin SiO2 by backside materials
*Toshitaka Kubo1, Chikatsu Iwase2, Ryo Kanou2, Shouta Shiba2, Tetsuo Shimizu2 (1. National Institute of Advanced Industrial Science and Technology (AIST) (Japan), 2. Sanyu Co., Ltd. (Japan))