Presentation Information
[04P-33]Influence of Radical Behavior on Si and Si0.7Ge0.3 Surface Reactions with CF4/H2 Plasma
*Ibuki Saburi1, Yuki Imai1, Takayoshi Tsutsumi1, Kenji Ishikawa1, Yuji Yamamoto1,2, Wei-Chen Wen2, Katsunori Makihara1,2 (1. Nagoya University (Japan), 2. IHP–Leibniz-Institut für Innovative Mikroelektronik (Germany))