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Session Details

Invited & OralWide Bandgap Semiconductors

Wide Bandgap Semiconductor-2

Tue. Mar 3, 2026 4:15 PM - 5:15 PM JST
Tue. Mar 3, 2026 7:15 AM - 8:15 AM UTC
Room D(N102)
Chair:Makoto Miyoshi(Nagoya Institute of Technology)
4:15 PM - 4:45 PM JST(7:15 AM - 7:45 AM UTC)

[03pD04I]Growth of Hexagonal Boron Nitrides by MOCVD and Their Applications

*Jong Kyu Kim1 (1. POSTECH (Korea))
4:45 PM - 5:15 PM JST(7:45 AM - 8:15 AM UTC)

[03pD05I]Optical Characterization and Process Development of SiC to be High-Performance Power Devices

*Masashi Kato1 (1. Nagoya Institute of Technology (Japan))
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