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Session Details

Invited & OralWide Bandgap Semiconductors

Wide Bandgap Semiconductor-5

Thu. Mar 5, 2026 9:30 AM - 11:30 AM JST
Thu. Mar 5, 2026 12:30 AM - 2:30 AM UTC
Room D(N102)
Chair:Yongzhao Yao(Mie University)
9:30 AM - 10:00 AM JST(12:30 AM - 1:00 AM UTC)

[05aD01I]Gas-phase reaction analysis in nitride semiconductor MOVPE

*Shugo Nitta1,2 (1. Mie University (Japan), 2. Nagoya University (Japan))
10:00 AM - 10:30 AM JST(1:00 AM - 1:30 AM UTC)

[05aD02I]Plasma-Driven Strategies for Next-Generation Sustainable Oxide Electronics

*Juan Paolo Bermundo1, Yukiharu Uraoka1 (1. Nara Institute of Science and Technology (Japan))
10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[05aD03O]Optical Characterization of Thin-Film InGaN-Based Edge-Emitting Lasers

Wai Yuen Fu1, *Hoi Wai Choi1 (1. University of Hong Kong (Hong Kong))
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[05aD04O]Enhancement of Photocurrent On/Off Ratio in Micro-LED Photodetectors via Porous Distributed Bragg Reflectors

*Pohan Huang1, Chia-Feng Lin1 (1. National Chung Hsing University (Taiwan))
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[05aD05O]Effects of long-term 850oC pre-annealing prior to rapid activation annealing at 1250oC on Mg-ion implanted GaN studied by using MOS structures

*Hinata Karasawa1, Masanobu Takahashi1, Masamichi Akazawa1 (1. Hokkaido University (Japan))
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[05aD06O]Optical Characteristics of Green InGaN VCSELs with Top Dielectric Reflectors

*Pin-Syuan Su1, Chia-Feng Lin1 (1. National Chung Hsing University (Taiwan))
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