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Session Details

Invited & OralWide Bandgap Semiconductors

Wide Bandgap Semiconductor-6

Thu. Mar 5, 2026 11:45 AM - 1:15 PM JST
Thu. Mar 5, 2026 2:45 AM - 4:15 AM UTC
Room D(N102)
Chair:Shugo Nitta(Mie University)
11:45 AM - 12:15 PM JST(2:45 AM - 3:15 AM UTC)

[05aD07I]Structual and Energy-Band Engineering of Quaternary AlGaInN Alloys and Their Application to Heterostructure Electronic Devices

*Makoto Miyoshi1 (1. Nagoya Institute of Technology (Japan))
12:15 PM - 12:30 PM JST(3:15 AM - 3:30 AM UTC)

[05pD08O]Simulation study of Polarization-Matched III-Nitride RTDs Using Quaternary AlGaInN Wells and Ternary AlInN Barriers

*hikaru imaizumi1, Akira mase1, Takashi Egawa1, Makoto Miyoshi1 (1. Nagoya Institute of technology (Japan))
12:30 PM - 12:45 PM JST(3:30 AM - 3:45 AM UTC)

[05pD09O]Liquid phase epitaxy of Al(Ga)N films under an atmospheric pressure nitrogen ambience

*Tetsuya Akasaka1 (1. Meisei University (Japan))
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