International Symposium on Sputtering & Plasma Processes (ISSP2026)
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Session Details

Oral Presentation4.Fundamentals of Thin Films Growth

Oral Session TF2

Wed. Jul 1, 2026 3:40 PM - 5:30 PM JST
Wed. Jul 1, 2026 6:40 AM - 8:30 AM UTC
Oral(Science Hall)
3:40 PM - 4:10 PM JST(6:40 AM - 7:10 AM UTC)

[TF2-06]Heteroepitaxial growth of polar, semipolar, and nonpolar ScGaN thin films on sapphire substrates by magnetron sputter epitaxy

*CHING - LIEN HSIAO1 (1. Department of Physics, Chemistry, and Biology (IFM), Linköping university, Sweden)
4:10 PM - 4:30 PM JST(7:10 AM - 7:30 AM UTC)

[TF2-07]Sc-doped GeTe thin films prepared by radio-frequency magnetron sputtering

Marek Bouska1, Jan Gutwirth1, Kamil Becvar1, Vladimir Kucek1, Stanislav Slang1, Petr Janicek1, Virginie Nazabal2,1, *Petr Nemec1 (1. University of Pardubice, 2. University of Rennes)
4:30 PM - 4:50 PM JST(7:30 AM - 7:50 AM UTC)

[TF2-08]Synthesis and oxidation behavior and processability of sputtered transition metal aluminum diborides with varied compositional complexity

*Jochen M Schneider1 (1. RWTH Aachen University)
4:50 PM - 5:10 PM JST(7:50 AM - 8:10 AM UTC)

[TF2-09]Defect Minimized Next Generation Cathodic Arc Coating Technology: A challenge of improving metal forming performance

*Ken Mita1, Shinichi Tanifuji1, Masaru Nakamura1, Susumu Kujime1, Takeshi Ishikawa2 (1. KOBE STEEL, LTD., 2. WADAYAMA COATING CENTER CO., LTD.)
5:10 PM - 5:30 PM JST(8:10 AM - 8:30 AM UTC)

[TF2-10]Design of Oxide Semiconductor Thin Films Using Reactive Plasma Deposition

*Hisashi Kitami1 (1. Sumitomo Heavy Industries, Ltd.)
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