[G] Melting and solidification process/High temperature process

2:55 PM - 3:10 PM JST(5:55 AM - 6:10 AM UTC)

[380] In situ observation of multiple parallel (1 1 1) twin boundary formation from step-like grain boundary during Si solidification

*HU Kuankan¹, MAEDA Kensaku¹, SHIGA Keiji¹, MORITO Haruhiko¹, FUJIWARA Kozo¹ (1. IMR)

Keywords:

Crystal/melt interface,Twin formation,Crystal growth from melt,Semiconducting silicon

The formation of multiple twin boundaries during Si solidification was investigated using in situ observation system. We estimated the undercooling and discussed by comparison with previous studies.