[G] Melting and solidification process/High temperature process

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[211] Interactions of small-angle grain boundaries with lattice dislocations during solidification of silicon

*Lu-Chung CHUANG¹, Kensaku MAEDA¹, Haruhiko MORITO¹, Kozo FUJIWARA¹ (1. IMR Tohoku Univ.)

Keywords:

Grain boundary,Multicrystalline Si,Directional solidification

Small-angle grain boundaries are capable of absorbing lattice dislocations and thus increase the misorientation of themselves during solidification. This phenomenon is significant for small grains.