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Simulation of infiltration of molten Si into SiC-C preform by finite element method

※表示の講演時間には質疑応答時間も含みます。<br />（質疑応答時間5分、基調講演と招待講演は5～10分）

JIMM-ISIJ Joint Session : Physico-chemical Properties of High Temperature Melts

日本金属学会2023年春期(第172回)講演大会

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[J18]Simulation of infiltration of molten Si into SiC-C preform by finite element method