Presentation Information

4:00 PM - 5:30 PM JST(7:00 AM - 8:30 AM UTC)

[P217]First-Principles Study of High-Density Carrier Doping in Wide-Gap Oxides

*Hiroki Ishii¹, Teruya Nagafuji¹, Akira Takahashi², Fumiyasu Oba² (1. Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology (M), 2. Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology)

Keywords:

透明導電体,第一原理計算,ドーピング,点欠陥

In₂O₃:Snをはじめとする透明導電性を示す5つの系とそれらの母結晶にFをドープした系について，フェルミ準位およびキャリア電子密度の上限を第一原理計算により調査した．

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