[S4] S4.New Materials Science on Nanoscale Structures and Functions at Crystal Interface(2)

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[S4.22] Atomic and Electronic Structure of Nd-doped Σ13 Grain Boundary in MgO

*Chen Qian¹, Inoue Kazutoshi¹, Saito Mitsuhiro², Kawahara Kazuaki², Nakamura Atsutomo³, Ikuhara Yuichi^1,2,4 (1. WPI-AIMR, Tohoku Univ., 2. Inst. Engineering Innovation, The Univ. of Tokyo, 3. School of Engineering Science, Osaka Univ., 4. JFCC)

Keywords:

MgO,Grain boundary,Segregation,Quantum nanowire

Towards designing quantum nanowires, this study investigates the structure and electrical properties of high-angle tilt GB in MgO and the effect of Nd-doping by combining experiments and calculations.