Session Details
[G]Thermoelectric Materials
Thu. Sep 18, 2025 9:30 AM - 11:45 AM JST
Thu. Sep 18, 2025 12:30 AM - 2:45 AM UTC
Thu. Sep 18, 2025 12:30 AM - 2:45 AM UTC
Room F(C206 2nd floor Building C)
座長:池田輝之(茨城大)、宮崎 秀俊(名古屋工業大学)
※表示の講演時間には質疑応答時間も含みます。
(質疑応答時間5分、基調講演と招待講演は5~10分)
(質疑応答時間5分、基調講演と招待講演は5~10分)
[33]Fabrication of Fe₂VAl Heusler-type Thermoelectric Materials by Metal Additive Manufacturing
*Ryusei INDEN1, Hidetoshi MIYAZAKI2 (1. 名工大(院生)、2. 名工大)
[34]DFT-Based Screening of Half-Heusler Compounds with High Young’s Modulus and Low Thermal Conductivity
*Hidetoshi MIYAZAKI1, Masashi MIKAMI2, Tomoyuki TAMURA1 (1. Nagoya Institute of Technology, 2. National Institute of Advanced Industrial Science and Technology)
[35]Thermoelectric properties of Hf-substituted p-type TiNiSn half-Heusler alloys
*Masashi Mikami1, Takumi Seido2, Hidetoshi Miyazaki2, Yoichi Nishino2 (1. AIST, 2. Nagoya Inst. Tech.)
[36]Low Thermal Conductivity and P–N Transition in Quaternary Half-Heusler Compounds
*Kazuki Imasato1, Philipp Sauerschnig1, Hidetoshi Miyazaki2, Masanobu Miyata1, Ishida Takao1, Atsushi Yamamoto1, Michihiro Ohta1 (1. National Institute of Advanced Industrial Science and Technology, 2. Nagoya Institute of Technology)
break
[37]Effect of Al doping on compositional gradient layered microstructure and thermoelectric properties of Mg2(Si,Sn) alloy
*Kota AKASAKA1, Feifan ZHANG1, YIXUN WANG1, Yonghoon LEE2, Yoshisato KIMURA1 (1. Science Tokyo, 2. KELK Ltd)
[38]Unidirectional solidification and thermoelectric properties of Fe-Al-Si(-Mn)
*Koki ODAGAWA1, Sayaka Kono1, Teruyuki Ikeda1 (1. Graduate School of Sci. and Eng., Ibaraki Univ)
[39]O(N) electron transport calculation using Krylov subspace method
*Masanobu Miyata1, Kazuki Imasato1, Takao Ishida1, Atsushi Yamamoto1, Michihiro Ohta1 (1. AIST)
[40]Enhanced thermoelectric properties of texture engineered and chemical homogeneous Mg3(Sb,Bi)2 by adding MXene
*Michihiro OHTA1, Philipp SAUERSCHNIG1, Kazuki IMASATO1, Masanobu MIYATA1, Masaki NARUKE2, Atsushi YAMAMOTO1, Takao ISHIDA1 (1. AIST, 2. JARI)