[S1] S1 New Materials Science on Nanoscale Structures and Functions at Crystal Interface II

10:40 AM - 10:55 AM JST(1:40 AM - 1:55 AM UTC)

[S1.14] Illumination-Dependent Electrical Conductivity at a Thermally Bonded Sapphire/Rutile TiO₂ Heterointerface

○RONGYAO YANG¹, YAN LI¹, RUOQI LI¹, SHUN KONDO³, EITA TOCHIGI², MASAO MATSUDA¹, KAZUTOSHI INOUE³, NAOYA SHIBATA², YUICHI IKUHARA^2,3, ATSUTOMO NAKAMURA¹ (1. The University of Osaka, 2. The University of Tokyo, 3. Tohoku University)

Keywords:

Heterointerface,Photoconductivity,SPM,Thermal diffusion bonding

A sapphire/rutile TiO₂ heterointerface was fabricated by thermal diffusion bonding. c-AFM revealed no measurable current under dark conditions, while sub- and super-bandgap illumination significantly enhanced interfacial conductivity. The photoresponse is attributed to defect-assisted charge transport at the heterointerface.