Presentation Information

[P221]Ab Initio Calculation for Elastic Constants of Metal-Semiconductor Eutectic Systems

○Mikio William Yoshioka-Hunter1, Kentaro Kyuno1 (1. Shibaura Institute of Technology)

Keywords:

Metal-Induced Crystallization,Ab Initio Calculation,Eutectic Alloy

In eutectic amorphous semiconductor/metal thin films, especially Au–Ge, crystallization is known to occur near 200°C, below the 361°C eutectic point. While semiconductor atoms migrate through the metal phase to the crystalline semiconductor phase, first-principles calculations are performed.

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