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[16p-P07-18]Fabrication of Si-semiconductor detectors for natural radiation sources

〇Nana Kobayashi1, Shinnosuke Idogawa1 (1.NIT, Kushiro College)
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Keywords:

semiconductor detectors,radiation sources

Si semiconductor devices have a problem of characteristic degradation and malfunction due to radiation. In order to solve this problem, the semiconductor materials have been changed to wide bandgap materials, and the characteristic degradation has been observed by irradiation of a large radiation source using a radiation facility. Therefore, it is difficult to fabricate and evaluate devices consistently in a single laboratory. In this study, we fabricated Si semiconductor detectors using natural radiation sources in order to realize inexpensive and simple radiation resistance evaluation of semiconductor devices. As a result, the semiconductor detector was confirmed to detect radiation.

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