[17a-A31-1~5] 4.3 Laser sources and Laser applications

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)English Presentation

[17a-A31-4] Evaluating Single Event Effects in Radiation-Tolerant Chips Using Short-Pulse Laser

〇(M2)Chien Ping Hung¹, Shih Bo Yu¹, Jia Han Li¹ (1.National Taiwan Univ)

Keywords:

Single Event Effects,Laser Testing,Radiation-Tolerant

Radiation-tolerant chips are essential for high-reliability applications in aerospace, military, and nuclear industries. This study evaluates these chips using 800 nm and 1060 nm short pulse lasers to analyze their behavior under different conditions. The experiments detect Single Event Effects (SEE), including Single Event Transients (SET) and Single Event Upsets (SEU). Results show the 1060 nm laser is more suitable for back illumination due to its higher penetration rate, while both lasers effectively induce SEE. Cross-section analysis and bit error rate (BER) evaluations provide insights into the chips' vulnerability and resilience, guiding the development of more robust designs.