[17a-B3-1~8] 6.1 Ferroelectric thin films

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)English Presentation

[17a-B3-6] Growth and Characterization of Epitaxial Co-Substituted Bismuth Ferrite Thin Film on Silicon Substrate

〇(P)Jie Chen¹, Kei Shigematsu^1,2,3, Masaki Azuma^1,2,3 (1.TokyoTech., 2.KISTEC, 3.Sumitomo Chemical Next-Generation Eco-Friendly Devices Collaborative Research Cluster, Tokyo Tech.)

Keywords:

Co-substituted bismuth ferrite,Silicon substrate

The Co-substituted bismuth ferrite (BFCO) thin films grown on perovskite substrates have demonstrated promise as a multiferroic material for nonvolatile magnetic memory devices with low power consumption [1-2]. For further device integration, it is essential to select a substrate compatible with silicon-CMOS processing. In this presentation, we will show our recent progress in successfully preparing the M_A phase of BFCO on a (001)-oriented Si substrate with a SrRuO₃/Pt/ZrO₂ coated wafer. Ferroelectric and ferromagnetic domains were observed using piezoresponse force microscope (PFM) and magnetic force microscope (MFM), respectively. We will present the results and investigations of the crystal structure, ferroelectric and ferromagnetic domain structures, and magnetic properties of the BFCO thin film on the silicon substrate.
Reference
[1] H. Hojo et al., Adv. Mater., 30, 1705665 (2018).
[2] K. Shimizu et al., Nano Lett., 19, 1767 (2019).