[17p-B1-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Highlighted Presentation

[17p-B1-6] Fabrication of Mg₂Si-PD linear-array for SWIR image sensor

Naoki Imaizumi¹, Kaito Ojima¹, Hideto Takei¹, Shunya Sakane¹, 〇Haruhiko Udono¹ (1.Ibaraki Univ.)

Keywords:

Mg2Si,IR sensor,Photodiode array