[17p-D61-1~14] 6.3 Oxide electronics

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)English Presentation

[17p-D61-1] [The 56th Young Scientist Presentation Award Speech] Ultrathin Freestanding Membranes of Ferroelectric Hafnia

〇Yufan Shen¹, Kousuke Ooe², Tomoaki Yamada^3,4, Shunsuke Kobayashi², Mitsutaka Haruta¹, Daisuke Kan¹, Yuichi Shimakawa¹ (1.Kyoto Univ. ICR, 2.JFCC, 3.Nagoya Univ, 4.Tokyo Tech. MDXES)

Keywords:

ferroelectric,hafnia,freestanding membrane

Two-dimensional freestanding membranes, which are free of external factors like substrate-induced effects, have been regarded as a promising platform for scientific research and device development. Freestanding membranes of materials usually display their bulk-equivalent properties and crystal structures due to the loss of external factors, while freestanding membranes of materials in metastable phases and their physical properties have not been explored yet. In this presentation, we show that freestanding membranes of Zr-substituted hafnia (Hf_0.5Zr_0.5)O₂ (HZO) can sustain its metastable structure and ferroelectricity in the monolayer limit.