[18a-A35-1~7] CS.6 Code-sharing Session of 4.5 & 17

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)English Presentation

[18a-A35-1] Self-assembly of dopant molecules on MoS₂ monolayer for degeneracy/heavily doping

〇(PC)Puneet Jain¹, Shotaro Yotsuya¹, Kosuke Nagashio¹, Daisuke Kiriya¹ (1.The Univ. of Tokyo)

Keywords:

Molybdenum disulfide,Doping,Thin-film transistor (TFT)

In the present work, we have fabricated an array of devices with MoS₂ monolayer as channel and Bi as source/drain, using photolithography. In the array, the channel length and width are varied from 5 to 50 um. The array is then doped with an asymmetrical molecule, to obtain heavily doped/degeneracy situation. It has been found that, the doping varies depending upon the channel width and channel length.
We will discuss more results in the meeting.