[18p-D61-1~21] 10.4 Spintronics in semiconductor, topological material, superconductor, and multiferroics

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[18p-D61-11] Drift-Induced Wavelength Modulation of Electron Spin Waves in Quasi-One-Dimensional GaAs/AlGaAs Quantum Well

〇Futa Sugawara¹, Keito Kikuchi¹, Jun Ishihara¹, Sota Yamamto¹, Yuzo Ohno², Makoto Kohda^1,3,4,5 (1.Grad. Sch. of Eng., Tohoku Univ., 2.Univ. of Tsukuba, 3.CSIS, Tohoku Univ., 4.DEFS, Tohoku Univ., 5.QUARC, QST)

Keywords:

spin-orbit interaction,two-dimensional electron gas

Electron spin waves are spatial structures of stripe patterns of spins generated with circularly polarized light in semiconductor quantum well. Electron spin waves can be used as information carriers by utilizing their superposition and interference properties, and they can be transported over distances of more than 100 µm via drift transport. In addition, during drift transport, the spatial spin precession frequency and precession length change according to the drift velocity. In this study, we demonstrated the wavelength modulation of electron spin waves using a quasi-one-dimensional wire device in a (001) GaAs/AlGaAs quantum well. Our simulations showed that in a 5 µm wide wire structure, increasing the drift velocity from 1.0×10⁴ m/s to 5.0×10⁴ m/s resulted in a wavelength modulation of about 6%. We will discuss the comparison with experimental results.