[18p-D61-1~21] 10.4 Spintronics in semiconductor, topological material, superconductor, and multiferroics

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)English Presentation

[18p-D61-15] Spin injection through a ferromagnetic Fe/Mg/SiN/n-Si tunnel junction with ohmic-like current-voltage characteristics for non-degenerated n-Si

〇Shoichi Sato^1,2, Masaaki Tanaka^1,2, Ryosho Nakane^3,1 (1.Tokyo Univ., 2.CSRN, 3.d.lab)

Keywords:

Silicon,spin injection,SiN

We study the spin injection into Si with a low donor concentration N_D = 4.3 × 10¹⁶ cm⁻³ through a ferromagnetic Fe/Mg/SiN/n-Si tunnel junction. This junction structure can realize both the Fermi-level depinning effect of SiN and the low work function of Mg, leading to good electron charge and spin transport characteristics at the same time. The three-terminal (3T) Hanle signals were clearly observed in both I_B > 0 (the spin injection bias (the reverse bias) regime) and I_B < 0 (the spin extraction bias (forward bias) regime), which likely originates from the ohmic-like I_B–V_J characteristics of the device. The spin lifetime τ_S was estimated from the fittings and compared with τ_S estimated by electron spin resonance (ESR). The spin injection into the n-Si is strongly supported by the fact that τ_S ~ 3.2 ns is comparable to an ESR-estimated τ_S value for a bulk Si material with a similar N_D value.