[18p-D61-1~21] 10.4 Spintronics in semiconductor, topological material, superconductor, and multiferroics

5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[18p-D61-18] Electrical spin injection into GaAs from perpendicularly magnetized Mn/Co bilayers

〇(M2)Kotaro Nara¹, Mineto Ogawa¹, Michihiko Yamanouchi¹, Tetsuya Uemura¹ (1.IST. Hokkaido Univ.)

Keywords:

spin injection,semiconductor,spintronics

Spin injection from perpendicularly magnetized ferromagnetic materials into semiconductors is an important technique for the realization of semiconductor spintronics devices, such as spin transistors and surface emitting spin lasers. In this study we report on the electrical spin injection into GaAs from perpendicularly magnetized Mn/Co bilayers using a nonlocal detection methods.
We fabricated a Mn/Co bilayer on GaAs(001) substrate. The anomalous Hall effect measurement showed that the Mn/Co bilayer has a clear perpendicular magnetic anisotropy. Moreover, clear spin-valve signal was observed in the nonlocal four terminal measurement. These results suggests the injection, transport and detection of perpendicular spins in a Mn/Co/GaAs lateral junction.