[18p-D61-1~21] 10.4 Spintronics in semiconductor, topological material, superconductor, and multiferroics

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)English Presentation

[18p-D61-3] Magnetoelectric switching phenomena in electron-doped hexagonal improper ferroelectrics displaying topologically protected magnetoelectric vortex state

〇Hena Das^1,2 (1.Kanagawa Institute of Industrial Science and Technology (KISTEC), 705-1 Shimoimaizumi, Ebina 243-0435, Japan, 2.Laboratory for Materials and Structures, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, Kanagawa 226-8503, Japan)

Keywords:

Spintronics and magnetics,computational materials science,topological materials

Magnetoelectric (ME) multiferroic systems hold promise to facilitate fast, ultra-low energy consuming memory and logic devices. However, for technological applications we need to ensure low coercive fields and maintain the desired ME functionality at nanoscale and above room temperature. Despite significant research developments, the number of technologically relevant room-temperature magnetoelectrics are still limited and hinders the design of practical magnetoelectric memories. Here, we will discuss an idea to realize noncollinear ferrimagnetic orders with a considerably high magnetization M ( ~ 1.2 μ_B/f.u.) and magnetic transition temperature (~ 290 K) and strong ME coupling in an improper ferroelectric forming topologically protected magnetoelectric vortex state [Hena Das et al., Nat. Commun. 5, 2998 (2014), Yanan Geng, Hena Das et al., Nat. Mater. 13, 163 (2014), Hena Das, Phys. Rev. Research 5, 013007 (2023)]. We will elucidate the microscopic mechanisms of electric field induced magnetic phase transitions and ME coupling processes and the chemical and structural control over these phenomena.