[18p-D61-1~21] 10.4 Spintronics in semiconductor, topological material, superconductor, and multiferroics

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[18p-D61-7] Oscillatory conduction behavior and its magnetic-field-induced enhancement in an all-epitaxial La_2/3Sr_1/3MnO₃/SrTiO₃/Nb:SrTiO₃ tunneling heterostructure

〇(DC)Tatsuro Endo¹, Masaaki Tanaka^1,2, Shinobu Ohya^1,2 (1.EEIS, Univ. of Tokyo, 2.CSRN, Univ. of Tokyo)

Keywords:

resonant tunneling,perovskite oxides,LSMO

Resonant tunneling (RT), which reflects the coherence of electrons in quantum wells, has been demonstrated in heterostructures using various materials. Among them, there are several reports of negative differential resistance (NDR) related to the resonant states and RT in perovskite-oxide-based heterostructures. For example, there are reports on NDR in heterostructures where defects or impurities are deliberately introduced and on RT in heterostructures with thin layers of electron gas formed either by δ-doping or by utilizing a spontaneously formed charged ferroelectric domain wall. These reports on RT, however, are either too complicated for straightforward analysis or give too little room for engineering. Here, we report a clear oscillation of electrical conductivity in a simple oxide-based tunnel diode with a SrTiO3 (STO) barrier between ferromagnetic La2/3Sr1/3MnO3(LSMO) and Nb:STO electrodes.