[18p-D61-1~21] 10.4 Spintronics in semiconductor, topological material, superconductor, and multiferroics

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[18p-D61-9] Room temperature voltage control of optical spin polarization maintaining photoluminescence intensity using 0D-2D semiconductor nanostructure

〇Hiroto Kise¹, Satoshi Hiura¹, Junichi Takayama¹, Kazuhisa Sueoka¹, Akihiro Murayama¹ (1.IST, Hokkaido Univ.)

Keywords:

electron spin polarization,electric field effect,quantum dot

We have fabricated an electric-field driven opto-spintronic device with InGaAs quantum well-InAs quantum dot tunnel-coupled structures to suppress the thermal escape of electron spins from the quantum dots. Circularly polarized photoluminescence measurements were performed at room temperature to investigate the bias dependence of PL intensity and circular polarization degree. In this study, the PL intensity at the quantum dot excitation state was maintained under +0.8 V and -1.6 V bias conditions, whereas the circular polarization degree decreased at negative bias voltages. This indicates that the band potential slope can induce the faster drift of electrons and can promote the spin relaxation in the quantum well.