[18p-P01-1~43] 2 Ionizing Radiation (Poster)

[18p-P01-2] Photoluminescence in CdTe bulk crystals prepared by the liquinert processed vertical Bridgman method using SiCl₄ gas

〇Takeshi Hirai¹, Akira Fujimoto², Yoshiyuki Harada², Hiroyasu Nakata³, Shiro Sakuragi⁴ (1.Ritsumeikan Univ., 2.Osaka Inst. of Tech., 3.Osaka Kyoiku Univ., 4.Union Materials Inc.)

Keywords:

semiconductor,photoluminescence,impurities

We prepared CdTe bulk crystals using the liquinert-processed vertical Bridgman method (LPVB) with SiCl₄ gas as the reactive gas to remove H₂O and O₂ from the raw materials and gas atmosphere. To examine the influence of the incorporation of impurities from SiCl₄ gas on the electronic states in the CdTe crystals prepared by LPVB, we measured photoluminescence (PL) spectra at 10 K for CdTe bulk crystals under SiCl₄ gas pressures of 8, 58, 150 Torr. On the basis of the PL spectra, we mainly discuss the impurity states formed by Cl impurities in the CdTe crystals.