Presentation Information

[19p-A25-6]Ultrafast optical response of Ti-doped NbO2

〇Hiroshi Tanimura1, Akihiro Ishii2, Takumi Nakajima1, Hitoshi Takamura2, Tetsu Ichitsubo1 (1.Tohoku Univ. (IMR), 2.Tohoku Univ. (Eng.))

Keywords:

femto-second laser,insulator-metal transition,photoinduced phase transition

NbO2 is a semiconductor with a bandgap of approximately 1 eV at room temperature. At around 1080 K, it undergoes an insulator-to-metal transition as the distorted rutile structure relaxes. It is known that the phase transition temperature of NbO2 can be lowered to around 600 K by doping with Ti. In this study, with the aim of applying Ti-doped NbO2 as a switching material, we investigated the ultrafast optical response after femtosecond laser irradiation. Significant changes in optical properties were observed, especially in the infrared region, along with the behavior of photoinduced phase transitions.

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