[19p-B6-1~18] 12.3 Functional Materials and Novel Devices

1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-B6-2] Stabilizing p-doped state of organic single crystals for strain sensor applications

〇Tomohiro Murata¹, Yu Yamashita^1,2, Yoshihisa Usami¹, Akiko Tajima¹, Shun Watanabe¹, Jun Takeya^1,2 (1.Univ. of Tokyo, 2.NIMS)

Keywords:

organic semiconductor,sensor

Single crystals of the organic semiconductor DNBDT-NW can be fabricated with a thickness of only a few molecular layers through a coating process and exhibit significant resistance changes under strain, suggesting their potential application as high-sensitivity strain sensors with molecular-scale thickness. In this study, we utilized ion-exchange doping to investigate the effect of different ion species on the stability of the doped state in the organic single crystal semiconductor. By employing bulky anions, we achieved a stable doped state even under high-temperature conditions.