[19p-P06-1~50] 10 Spintronics and Magnetics (Poster)

[19p-P06-21] Field-free spin-orbital torque magnetization switching in gallium-doped thulium iron garnet

〇Naoto Yamashita^1,2, Roselle Ngaloy², Yuichiro Kurokawa¹, Hiromi Yuasa¹, Saroj Dash² (1.Kyushu Univ., 2.Chalmers)

Keywords:

spin-orbital torque,Tm3Fe5O12,focused ion beam

We investigated the effects of Ga ion irradiation on the spin-orbital torque in 5 nm-thick thulium iron garnet (TmIG). The Hall cross devices were prepared by deposltion of 3 nm-thick Pt and photolithography.The Ga-doped region is visualised by scanning electron microscope after the irradiation of 5 pC/µm² at the acceralation voltage of 5 kV. The spin-Hall angle in both Ga-doped and undoped devices were evaluated as 0.012 and 0.015. Spin-orbital torque magnetization switching at 0 mT was demonstrated using both devices.