[20p-A35-1~9] 3.12 Semiconductor optical devices

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[20p-A35-6] The Optical Excitation Effect in a Two-Wavelength Injected Semiconductor Optical Amplifier

〇Kaito Nagasawa¹, Yasutoshi Inoguchi¹, Kazuyoku Tei¹ (1.Tokai Univ.)

Keywords:

Semiconductor Optical Amplifier,holding beam,optical excitation effect

Lasers with wavelengths in the 900 nm range are used in optical sensing technologies such as LiDAR (Light Detection and Ranging) and ToF (Time of Flight). Injection of holding beam can suppress Amplified Spontaneous Emission (ASE) from Semiconductor Optical Amplifiers (SOA), confirming an increase in pulsed beam output due to optical excitation [2]. This study reports the observed optical excitation effect in a Semiconductor Optical Amplifier (SOA) with two-wavelength continuous-wave (CW) injection.